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Power Transistors
2SC5591
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output
15.50.5
(10.0)
3.20.1 5
(4.5)
3.00.3 5
18.60.5 (2.0) Solder Dip
* High breakdown voltage: 1 700 V; supporting a large screen CRT and wider visible angle * High-speed switching: tf < 0.2 s * Low Collector to emitter saturation voltage: VCE(sat) < 3 V * Wide area of safe operation (ASO)
26.50.5
(23.4)
I Features
(2.0)
5 (4.0) 2.00.2 1.10.1 0.70.1 5.450.3 5 5
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Symbol VCBO VCES VCEO Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation TC = 25C Ta = 25C Tj Tstg VEBO ICP IC IB PC Rating 1 700 1 700 600 7 30 20 11 70 3.5 150 -55 to +150 C C Unit V V V V A A A W
10.90.5
3.30.3
5
1
2
3
(2.0)
5.50.3
1: Base 2: Collector 3: Emitter TOP-3E Package
Marking Symbol: C5591 Internal Connection
C B
Junction temperature Storage temperature
E
I Electrical Characteristics TC = 25C 3C
Parameter Collector cutoff current Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1 000 V, IE = 0 VCB = 1 700 V, IE = 0 Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time VEB = 7 V, IC = 0 VCE = 5 V, IC = 10 A IC = 10 A, IB = 2.5 A IC = 10 A, IB = 2.5 A VCE = 10 V, IC = 0.1 A, f = 0.5 MHz IC = 10 A, Resistance loaded IB1 = 2.5 A, IB2 = -5.0 A 3 3.0 0.2 6 Min Typ Max 50 1 50 12 3 1.5 V V MHz s s Unit A mA A
22.00.5
(1.2)
1

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